Maligned by early design issues, the polarization interferometer has not been a significant tool in many analysts' arsenals. New technical improvements could change that.
Raman Microscopy for Characterizing Defects in SiC
January 2nd 2025Because there is a different Raman signature for each of the polymorphs as well as the contaminants, Raman microscopy is an ideal tool for analyzing the structure of these materials as well as identifying possible contaminants that would also interfere with performance.