NIR Sensing Breakthrough: New Semiconductor Technology for Tuberculosis Detection

New NIR Semiconductor Technology for Tuberculosis Detection © Dr_Microbe-chronicles - stock.adobe.com

Tuberculosis (TB) remains one of the deadliest infectious diseases worldwide, affecting millions of people and also animals each year. Current diagnostic methods often fall short in terms of speed, accuracy, and accessibility, particularly in resource-limited settings. Over the past decade, the number of reported tuberculosis cases worldwide has ranged from approximately 2.5 to 3.2 million annually. While notification rates have declined slightly in recent years, overall case numbers have remained stable due to global population growth. In 1990, tuberculosis affected an estimated 8 million individuals, with mortality ranging between 2.6 and 2.9 million (1).

In a recent mini-review published in the journal Frontiers in Sensors, researchers Melaku Dereje Mamo, Yaschelewal Zigyalew, Seid Emamu Gelan, Bulelwa Ntsendwana, and Lucky Sikhwivhilu explore and review how dilute III-V semiconductors could significantly enhance near-infrared (NIR) sensing for TB detection. The study, conducted at the Bio and Emerging Technology Institute in Ethiopia and the DSI/Nanotechnology Innovation Centre in South Africa, highlights advancements in semiconductor materials and their potential impact on global TB diagnostics (2).

The Growing Need for Advanced TB Detection

TB, caused by Mycobacterium tuberculosis, presents a major health challenge due to its high transmission rate, the rise of multidrug-resistant (MDR-TB) and extensively drug-resistant (XDR-TB) strains. Traditional diagnostic techniques, such as sputum smear microscopy and culture-based tests, are slow and require specialized and staffed laboratories. The ability to detect TB rapidly and accurately using NIR sensing could transform public health strategies by enabling early-stage diagnosis and real-time monitoring (2).

How NIR Sensing Works

NIR spectroscopy operates in the wavelength range of 700–2,500 nm and allows for non-invasive identification of chemical compositions in biological samples. The method is particularly advantageous due to its speed, portability, and adequate resolution. Recent advancements have integrated machine learning to improve detection accuracy, making NIR spectroscopy a viable alternative to conventional TB diagnostics. The review article emphasizes that the incorporation of dilute III-V semiconductors into NIR sensors enhances sensitivity and efficiency, making them more suitable for detecting TB in both human and animal populations (2).

The Role of Dilute III-V Semiconductors

III-V semiconductors, such as gallium arsenide (GaAs) and indium phosphide (InP), have long been recognized for their superior optoelectronic properties. The introduction of dilute elements, such as nitrogen, modifies their bandgap properties, improving their responsiveness to NIR wavelengths. The study describes how these semiconductors can be fabricated into efficient NIR sensors using advanced techniques such as molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). These processes allow precise control over the semiconductor’s electronic and optical properties, enhancing their effectiveness in TB detection (2).

Key Findings and Technological Advancements

The researchers identified several advantages of using dilute III-V semiconductors in NIR sensors (2):

• High Sensitivity: Improved absorption and emission properties allow for better detection of TB biomarkers in biological samples.
• Enhanced Stability: These materials exhibit high thermal and chemical stability, making them reliable for long-term diagnostic use.
• Miniaturization Potential: The small size of semiconductor-based NIR sensors enables portable and field-deployable diagnostic devices.
• Broad Application Range: Beyond TB detection, these sensors can be applied to medical imaging, environmental monitoring, and food safety analysis.

Additionally, the review highlights recent breakthroughs in organic photodiodes (OPDs) and carbonized polymer dots (CPDs), which further enhance the sensitivity and selectivity of NIR-based TB detection (2).

Challenges and Future Directions While the potential of dilute III-V semiconductors in TB diagnostics is promising, several challenges remain. The study notes that current NIR sensors require further optimization to improve their detection limits and specificity for the TB application. Additionally, large-scale production of these semiconductors needs to be cost-effective to ensure widespread adoption in low-resource settings. Future research should focus on (2):

• Developing low-cost fabrication methods for III-V semiconductors.
• Enhancing integration with AI-driven analysis to refine diagnostic accuracy.
• Expanding field trials to assess real-world performance in diverse populations.

The mini-review by Mamo and colleagues underscores the transformative potential of dilute III-V semiconductors in NIR sensing for TB detection. By leveraging these advanced materials, scientists are paving the way for faster, more accurate, and accessible TB diagnostics. As research progresses, this technology could become a game-changer in the global fight against tuberculosis.

References

(1) Sudre, P.; Ten Dam, G.; Kochi, A. Tuberculosis: A Global Overview of the Situation Today. Bull. World Health Organ. 1992, 70 (2), 149. Available at: https://pmc.ncbi.nlm.nih.gov/articles/PMC2393290/ (accessed 2025-02-12).

(2) Mamo, M. D.; Zigyalew, Y.; Gelan, S. E.; Ntsendwana, B.; Sikhwivhilu, L. Advancements in NIR Sensing for Tuberculosis Detection Using Dilute III-V Semiconductors: Current Status and Future Prospects. Front. Sens. 2025, 5, 1521727. DOI: 10.3389/fsens.2024.1521727